SBL3030Pt, sbl3040pt www.vishay.com vishay general semiconductor revision: 12-jun-13 1 document number: 88732 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 dual common cathode schottky rectifier features ? power pack ? guardring for overvoltage protection ? lower power losses, high efficiency ? low forward voltage drop ? high forward surge capability ? high frequency operation ? solder dip 275 c max. 10 s, per jesd 22-b106 ? material categorization: for definitions of compliance please see www.vishay.com/doc?99912 typical applications for use in low voltage, high frequency rectifier of switching mode power supplies, freewheeling diodes, dc/dc converters, or polarity protection application. mechanical data case: to-247ad (to-3p) molding compound meets ul 94 v-0 flammability rating base p/n-e3 - rohs-co mpliant, commercial grade terminals: matte tin plated leads, solderable per j-std-002 and jesd 22-b102 ? e3 suffix meets jesd 201 class 1a whisker test polarity: as marked mounting torque: 10 in-lbs maximum note (1) pulse test: 300 s pulse width, 1 % duty cycle primary characteristics i f(av) 30 a v rrm 30 v, 40 v i fsm 275 a v f 0.55 v t j max. 125 c package to-247ad (to-3p) diode variations common cathode pin 1 pin 3 case pin 2 to-247ad (to-3p) 1 2 3 maximum ratings (t a = 25 c unless otherwise noted) parameter symbol SBL3030Pt sbl3040pt unit maximum repetitive pe ak reverse voltage v rrm 30 40 v maximum rms voltage v rwm 21 28 v maximum dc blocking voltage v dc 30 40 v maximum average forward rectified current (fig. 1) i f(av) 30 a peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode i fsm 275 a operating junction and storage temperature range t j , t stg - 40 to + 125 c electrical characteristics (t a = 25 c unless otherwise noted) parameter symbol test conditions SBL3030Pt sbl3040pt unit maximum instantaneous forward voltage ? per diode v f (1) 15 a 0.55 v maximum instantaneous reverse current at rated dc blocking voltage per diode i r (1) t c = 25 c 1.0 ma t c = 100 c 75 ma
SBL3030Pt, sbl3040pt www.vishay.com vishay general semiconductor revision: 12-jun-13 2 document number: 88732 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 ratings and characteristics curves (t a = 25 c unless otherwise noted) fig. 1 - forward current derating curve fig. 2 - maximum non-repetiti ve peak forward surge current per diode fig. 3 - typical instantaneous forward characteristics per diode fig. 4 - typical reverse characteristics per diode thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol SBL3030Pt sbl3040pt unit thermal resistance, junction to case per diode r ? jc 1.5 c/w ordering information (example) package preferred p/n unit weight (g) pac kage code base quantity delivery mode to-247ad SBL3030Pt-e3/45 6.13 45 30/tube tube 0 50 100 150 0 6 12 18 24 30 resistive or inductive load average forward cu rrent (a) case temperature (c) peak forward surge current (a) 1 10 100 0 50 100 150 200 250 300 n umber of cycles at 60 hz t j = t j max. 8.3 ms single half sine-wave 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0.01 0.1 1 10 100 t j = 125 c t j = 25 c pulse width = 300 s 1 % duty cycle instantaneous forward voltage (v) instantaneous forward current (a) 0 20 40 60 80 100 0.01 0.1 1 10 100 percent of rated peak reverse voltage (%) instantaneous reverse current (ma) t j = 125 c t j = 25 c t j = 75 c
SBL3030Pt, sbl3040pt www.vishay.com vishay general semiconductor revision: 12-jun-13 3 document number: 88732 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 5 - typical junction capacitance per diode fig. 6 - typical transient thermal impedance per diode package outline dimensions in inches (millimeters) 0.1 1 10 100 100 1000 10 000 reverse voltage (v) junction capacitance (pf) t j = 25 c f = 1.0 mhz v sig = 50 mv p-p 0.01 0.1 1 10 100 0.1 1 10 100 t - pulse duration (s) transient thermal impedance (c/w) pi n 1 pi n 3 case pi n 2 to-247ad (to-3p) 0.245 (6.2) 0.225 (5.7) 0.645 (16.4) 0.625 (15.9) 0.323 (8.2) 0.313 (7.9) 0.142 (3.6) 0.138 (3.5) 0.170 (4.3) 0.086 (2.18) 0.076 (1.93) 0.160 (4.1) 0.140 (3.5) 0.225 (5.7) 0.205 (5.2) 0.127 (3.22) 0.117 (2.97) 0.048 (1.22) 0.044 (1.12) 0.795 (20.2) 0.775 (19.6) 0.840 (21.3) 0.820 (20.8) 1 2 3 0.078 (1.98) ref. 0.203 (5.16) 0.193 (4.90) 10 typ. both sides 30 10 1 ref. both sides 0.030 (0.76) 0.020 (0.51) 0.118 (3.0) 0.108 (2.7)
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